Comparative Performance Analysis of Nonlinearity Cancellation Techniques for MOS-C Realization in Integrator Circuits

In this paper, a comparative performance analysis of mostly used four nonlinearity cancellation techniques used to realize the passive resistor by MOS transistors, is presented. The comparison is done by using an integrator circuit which is employing sequentially Op-amp, OTRA and ICCII as active element. All of the circuits are implemented by MOS-C realization and simulated by PSPICE program using 0.35μm process TSMC MOSIS model parameters. With MOS-C realization, the circuits became electronically tunable and fully integrable which is very important in IC design. The output waveforms, frequency responses, THD analysis results and features of the nonlinearity cancellation techniques are also given. Keywords—Integrator circuits, MOS-C realization, nonlinearity cancellation, tunable resistors.